feb. 2009 1 c1 e2 c2e1 e2 g2 label 3-m5 nuts 2-6.5 mounting holes tab #110. t=0.5 17 48 13 94 23 23 17 29 +1.0 ?.5 21.2 7.5 16 7 16 7 16 80 0.25 4184 12 12 12 e1g1 c2e1 e2 e2 g2 g1 e1 c1 circuit diagram 4 12.5 (screwing depth) 20 (14) CM200DY-24A application ac drive inverters & servo controls, etc mitsubishi igbt modules CM200DY-24A high power switching use ? i c ................................................................... 200a ? v ces ......................................................... 1200v ? insulated type ? 2-elements in a pack outline drawing & circuit diagram dimensions in mm
feb. 2009 2 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 600v, i c = 200a, v ge = 15v v cc = 600v, i c = 200a v ge = 15v r g = 1.6 ? , inductive load i e = 200a i e = 200a, v ge = 0v igbt part (1/2 module) *1 fwdi part (1/2 module) *1 case to heat sink, thermal compound applied (1/2 module) *1,*2 i c = 20ma, v ce = 10v i c = 200a, v ge = 15v v ce = 10v v ge = 0v 1200 20 200 400 200 400 1340 ?0 ~ +150 ?0 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 mitsubishi igbt modules CM200DY-24A high power switching use v v a a w c c v rms n ?m g 1 0.5 3.0 35 3 0.68 130 100 450 350 150 3.8 0.093 0.17 21 ma a nf nc ns c v k/w ? 2.1 2.4 1000 9.0 0.022 1.6 7v v 68 ns i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r g symbol parameter v ge(th) v ce(sat) * 1 : case temperature (t c ), heat sink temperature (t f ) measured point is just under the chips. * 2 : typical value is measured by using thermally conductive grease of = 0.9[w/(m ?k)]. note 1. i e , v ec , t rr & q rr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage w eight g-e short c-e short dc, t c = 84 c *1 pulse (note 2) pulse (note 2) t c = 25 c *1 terminals to base plate, f = 60hz, ac 1 minute main terminals m5 screw mounting m6 screw t ypical value symbol parameter collector current emitter current t orque strength conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit t yp. limits min. max. test conditions electrical characteristics (tj = 25 c, unless otherwise specified) absolute maximum ratings (tj = 25 c, unless otherwise specified) collector cutoff current gate-emitter threshold voltage gate leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance t otal gate charge t urn-on delay time turn -on rise time t urn-off delay time t urn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance external gate resistance thermal resistance
feb. 2009 3 mitsubishi igbt modules CM200DY-24A high power switching use 300 350 400 250 100 50 200 150 0 0 46810 output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) t j = 25c 11 12 10 9 v ge = 20v 2 15 13 4 3 2 1 0 0 100 300 350 400 200 250 150 collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v ge = 15v t j = 25c t j = 125c 50 10 8 6 4 2 0 20 12 14 6810 16 18 gate-emitter voltage v ge (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) t j = 25c i c = 80a 10 1 2 3 5 7 10 2 2 3 5 7 10 3 012 4 35 free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) t j = 25c t j = 125c 10 ? 10 0 10 ? 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 2 10 0 357 2 10 1 357 2 10 2 357 capacitance? ce characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) c ies c oes c res v ge = 0v 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 1 10 2 57 10 3 23 57 23 half-bridge switching characteristics (typical) switching time (ns) collector current i c (a) conditions: v cc = 600v v ge = 15v r g = 1.6? t j = 125c inductive load t d(off) t d(on) t f t r i c = 400a i c = 200a performance curves
feb. 2009 4 mitsubishi igbt modules CM200DY-24A high power switching use 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 t rr i rr reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) reverse recovery time t rr (ns) reverse recovery current l rr (a) conditions: v cc = 600v v ge = 15v r g = 1.6? t j = 25c inductive load 10 ? 10 2 10 1 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 23 57 single pulse t c = 25c under the chip transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j?? (ratio) time (s) 10 0 2 3 5 7 2 3 5 7 10 1 10 2 57 10 3 23 57 23 recovery loss vs. i e (typical) recovery loss (mj/pulse) emitter current i e (a) conditions: v cc = 600v v ge = 15v r g = 1.6? t j = 125c inductive load c snubber at bus err switching loss vs. collector current (typical) switching loss (mj/pulse) collector current i c (a) 10 2 10 1 10 0 2 3 5 7 2 3 5 7 10 0 10 1 57 10 2 23 57 23 recovery loss vs. gate resistance (typical) recovery loss (mj/pulse) gate resistance r g (?) conditions: v cc = 600v v ge = 15v i e = 200a t j = 125c inductive load c snubber at bus err igbt part: per unit base = r th(j c) = 0.093k / w fwdi part: per unit base = r th(j c) = 0.17k / w switching loss vs. gate resistance (typical) switching loss (mj/pulse) gate resistance r g (?) 10 2 10 1 10 0 2 3 5 7 2 3 5 7 10 1 10 2 57 10 3 23 57 23 conditions: v cc = 600v v ge = 15v r g = 1.6? t j = 125c inductive load c snubber at bus esw(off) esw(on) 10 2 10 1 10 0 2 3 5 7 2 3 5 7 10 0 switching loss (mj/pulse) 10 1 57 10 2 23 57 23 conditions: v cc = 600v v ge = 15v i c = 200a t j = 125c inductive load c snubber at bus esw(on) esw(off)
feb. 2009 5 mitsubishi igbt modules CM200DY-24A high power switching use 0 4 8 16 12 20 0 800 400 1200 600 200 1400 1000 gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) v cc = 600v v cc = 400v i c = 200a
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